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MODELS:

 
NRE Chamber with Platen
 

NRE-4000

 

Reactive Ion Etching

 
 
 
NRE-3000 Table-top Reactive Ion Etching System
NRP-4000 Dual Reactive Ion Etching and Plasma Enhanced Chemical Vapor Deposition System
NRE-4000 Stand-alone Reactive Ion Etching System

NDR-4000 Deep Reactive Ion Etching System

   
  Descriptions :    
 

The NRE-3000 is a table-top Reactive Ion System. While the main features, such as the chamber, gas distribution plate, RF platen, and PC controls are the same as the stand-alone version, certain options may not be provided due to space constraints. For example, the table-top unit does not use a throttle valve, the pressure is set with flow, the maximum number of MFC's is four, and no sieve filter is provided.

   
 

The NRE-4000 is a stand-alone Reactive Ion Etching (RIE) system with shower-head gas distribution and a water cooled RF platen. It has a stainless steel cabinet and a 13" cylindrical aluminum chamber that opens from the top for easy wafer loading. The chamber holds wafers up to 8" in diameter and has two ports, one with a 2" window and the other with a blank off for end point detection and other diagnostics. The chamber reaches 10 -6 Torr or lower base pressure depending on the pumping package. The self-DC bias is continuously monitored and reaches as high as -500 V, an important feature for anisotropic etching. The system is completely automated and PC controlled.

 

The NRP-4000 is a Dual Reactive Ion Etching and Plasma Enhanced Chemical Vapor Deposition System. It has the same footprint as NRE-4000 or NPE-4000 (see stand-alone PECVD system), but it combines the complete deposition and etching capabilities of two separate systems using two chambers and a common pumping and power delivery package. The chambers are isolated with pneumatically controlled gate valves. A single PC controls both systems and one or the other chamber can run at a time.

 
The NDR-4000 is a Deep Reactive Ion Etching System with cryogenic wafer cooling and biasable platen and a 2KW, 8" Inductively Coupled Plasma Source. It has 500L/sec turbo and process can be run in the range of 10 -3 Torr.
 
 
 
 
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