NPE-4000 PECVD system is capable of depositing high quality SiO 2 , Si 3 N 4, or DLC films on up to 8" diameter substrate sizes. It is a stand-alone PC controlled system that uses RF shower-head electrode of Hollow Cathode RF plasma source with Fractal Gas Distribution to generate plasma. The platen can be biased with RF or pulsed DC and it is heated resistively or cooled with chilled water circulation. The standard unit comes with one carrier gas and two reactive gas lines and with optional mass flow meters. The NPE-4000 system is designed for the most demanding applications in R&D and single wafer manufacturing. Its unique gas distribution system and the planar Hollow Cathode Plasma source make it possible to fulfill a wide range of requirements such as plasma density, uniformity, and separate activation of reactive species to cover the broadest possible deposition parameters.